DCR1150N42 phase control thyristor ds5967 - 2 april 2012 (ln 29433 ) 1 / 1 0 www.dynexsemi.com features ? double side cooling ? high surge capability applications ? medium voltage soft starts ? high voltage power supplies ? static switches voltage ratings part and ordering numbe r repetitive peak voltages v drm and v rrm v conditions DCR1150N42 dcr1150n40 42 00 40 00 t vj = - 40c to 125c, i drm = i rrm = 1 00ma, v drm , v rrm t p = 10ms, v dsm & v rsm = v drm & v rrm + 100v respectively lower voltage grades available. ordering inform ation when ordering, select the required part number shown in the voltage ratings selection table. for example: DCR1150N42 note: please use the complete part number when ordering and quote this number in any future correspondence relating to your order . key parameters v drm 42 00v i t(av) 115 0a i tsm 168 00a dv/dt* 1500v/s di/dt 10 00a/s * higher dv/dt selections available outline type code: n (see package details for further information) fig. 1 package outline
semiconductor DCR1150N42 2 / 1 0 www.dynexsemi.com current ratings t case = 60c unless stated otherwise symbol parameter test conditions max. units double side cooled i t(av) mean on - state current half wave resistive load 1150 a i t(rms) rms value - 1806 a i t continuous (direct) on - state current - 1665 a surge ratings symbol parameter test conditions max. units i tsm surge (non - repetitive) on - state current 10ms half sine, t case = 125c 16.8 ka i 2 t i 2 t for fusing v r = 0 1.41 ma 2 s thermal and me chanical ratings symbol parameter test conditions min. max. units r th(j - c) thermal resistance C junction to case double side cooled dc - 0.0221 c/w single side cooled anode dc - 0.041 c/w cathode dc - 0.0516 c/ w r th(c - h) thermal resistance C case to heatsink clamping force 23 kn double side - 0.004 c/w (with mounting compound) single side - 0.008 c/w t vj virtual junction temperature blocking v drm / vrrm - 125 c t stg storage temperature range - 55 125 c f m clamping force 20.0 25.0 kn
semiconductor DCR1150N42 3 / 1 0 www.dynexsemi.com dynamic characteristics symbol parameter test conditions min. max. units i rrm /i drm peak reverse and off - state current at v rrm /v drm , t case = 125c - 1 00 ma dv/dt max. li near rate of rise of off - state voltage to 67% v drm , t j = 125c, gate open - 1500 v/s di/dt rate of rise of on - state current from 67% v drm to 2x i t(av) repetitive 50hz - 25 0 a/s gate source 30v, 10 ? , non - repetitive - 10 00 a/s t r < 0.5s, t j = 125c v t(to) threshold voltage C low level 300a to 85 0a at t case = 125c - 0.86 v threshold voltage C high level 850a to 4 000a at t case = 125c - 1.0 v r t on - state slope resistance C low level 300a to 85 0a at t case = 125c - 0.611 m ? on - state slope resistance C high level 850a to 4 000a at t case = 125c - 0.444 m ? t gd delay time v d = 67% v drm , gate source 30v, 10 ? - 3 s t r = 0.5s, t j = 25c t q turn - off time t j = 125c,i peak = 1000a, t p = 1000us, v rm = 100v, di/dt = - 5a/ s, 8 00 s dv dr /dt = 20v/s linear to 2500v i rr reverse recovery current i t = 1000a, t p = 1000us,t j = 125c, di/dt = - 5a/s, v r = 100v 81 121 a q s stored charge 20 00 35 00 c i l latching current t j = 25c, v d = 5v - 3 a i h holding current t j = 25c, r g - k = ? , i tm = 500a, i t = 5a - 300 ma
semiconductor DCR1150N42 4 / 1 0 www.dynexsemi.com gate trigger characteristics and ratings symbol parameter test conditions max. units v gt gate trigger voltage v drm = 5v, t case = 25c 1.5 v v gd gate non - trigger voltage at 50% v drm, t case = 125c 0.4 v i gt gate trigger current v drm = 5v, t case = 25c 3 50 ma i gd gate non - trigger current at 50% v drm, t case = 125c 15 ma curves fig.2 maximum & minimum on - state characteristics v tm equation where a = 0. 259886 b = 0.122742 v tm = a + bln (i t ) + c.i t +d. ? i t c = 0.000418 d = - 0.002452 these values are valid for t j = 125c for i t 300a to 40 00a 0 500 1000 1500 2000 2500 3000 3500 4000 4500 0.5 1 1.5 2 2.5 3 instantaneous on - state current i t - (a) instantaneous on - state voltage v t - (v) min 25 c min 125 c max 25 c max 125 c
semiconductor DCR1150N42 5 / 1 0 www.dynexsemi.com fig.3 on - state power dissipation C sine wave fig.4 maximum permissible case temperature, d ouble side cooled C sine wave fig.5 maximum permissible heatsink temperature, double side cooled C sine wave fig.6 on - state power dissipation C rectangular wave 0 2 4 6 8 10 12 14 16 0 1000 2000 3000 4000 mean power dissipation - (kw) mean on - state current, i t(av) - (a) 180 120 90 60 30 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 250 500 750 1000 1250 1500 1750 maximum case temperature, t case ( o c ) mean on - state current, i t(av) - (a) 180 120 90 60 30 0 25 50 75 100 125 0 250 500 750 1000 1250 1500 1750 maximum heatsink temperature, t heatsink - ( c) mean on - state current, i t(av) - (a) 180 120 90 60 30 0 2 4 6 8 10 12 0 1000 2000 3000 4000 mean power dissipation - (kw) mean on - state current, i t(av) - (a) d.c. 180 120 90 60 30
semiconductor DCR1150N42 6 / 1 0 www.dynexsemi.com fig.7 maximum permissible case temperature, double side cooled C rectangular wave fig.8 maximum permissible heatsink temperature, double side cooled C rectangular wave fig.9 maximum (limit) transient thermal impedance C junction to case (c/kw) 0.0 5.0 10.0 15.0 20.0 25.0 30.0 35.0 40.0 45.0 50.0 55.0 0.001 0.01 0.1 1 10 100 thermal impedance, z th(j - c) ( c/kw ) time ( s ) zth double side cooled zth cathode side cooled zth anode side cooled 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 500 1000 1500 2000 2500 3000 maximum permissible case temperature , tcase - ( c) mean on - state current, it(av) - (a) d.c. 180 120 90 60 0 25 50 75 100 125 0 500 1000 1500 2000 2500 maximum heatsink temperature t heatsink - ( o c) mean on - state current, i t(av ) - (a) d.c. 180 120 90 60 1 2 3 4 double side cooled r i (c/kw) 3.4733 4.9047 9.1463 4.5220 t i (s) 0.1457 0.0166 1.2832 0.3767 anode side cooled r i (c/kw) 7.6674 5.0530 9.7355 27.5992 t i (s) 0.2241 0.0169 4.0566 8.2780 cathode side cooled r i (c/kw) 6.0393 4.2782 5.1301 25.0874 t i (s) 0.1356 0.0143 0.6594 7.2358 )] / exp( 1 ( [ 4 1 i i i i th t t r z ? ? ? ? ? ? ? r th(j-c) conduction tables show the increments of thermal resistance r th(j-c) when the device operates at conduction angles other than d.c. double side cooling anode side cooling cathode sided cooling ? z th (z) ? z th (z) ? z th (z) ? sine. rect. ? sine. rect. ? sine. rect. 180 3.03 2.07 180 3.03 2.07 180 3.12 2.12 120 3.49 2.95 120 3.49 2.95 120 3.61 3.04 90 3.99 3.43 90 3.99 3.43 90 4.13 3.54 60 4.43 3.94 60 4.43 3.94 60 4.60 4.08 30 4.77 4.49 30 4.76 4.48 30 4.96 4.66 15 4.92 4.77 15 4.92 4.77 15 5.13 4.97 )] / exp( 1 ( [ 4 1 i i i i th t t r z ? ? ? ? ? ? ?
semiconductor DCR1150N42 7 / 1 0 www.dynexsemi.com fig.10 single - cycle surge current fig.11 multi - cycle surg e current fig.12 stored charge fig.13 reverse recovery current conditions t j = 125c t p = 1ms v r = - 100v 0 1 2 3 0 5 10 15 20 25 30 35 40 1 10 100 i 2 t (ma 2 s) surge current, i tsm - (ka) pulse width, t p - (ms) i 2 t i tsm conditions: t case = 125 c v r = 0 half - sine wave 1 10 100 1 10 100 surge current, i tsm - (ka) number of cycles conditions: tcase = 125 c v r =0 pulse width = 10ms 0 1000 2000 3000 4000 5000 6000 7000 0 5 10 15 20 25 stored charge, q s - (uc) rate of decay of on - state current, di/dt - (a/us) conditions t j = 125oc t p = 1ms v r = - 100v q smax = 1716.5*(di/dt) 0.4434 q smin = 899.3*(di/dt) 0.4966 0 50 100 150 200 250 300 350 0 5 10 15 20 25 reverse recovery current, i rr - (a) rate of decay of on - state current, (di/dt) - (a/us) i rrmin = 25.156*(di/dt) 0.7297 i rrmax = 39.24(di/dt) 0.698
semiconductor DCR1150N42 8 / 1 0 www.dynexsemi.com fig14 gate characteristics fig. 15 gate characteristics 0 1 2 3 4 5 6 7 8 9 10 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 gate trigger voltage, v gt - (v) gate trigger current i gt , - (a) tj = 125 o c tj = 25 o c tj = - 40 o c preferred gate drive area upper limit lower limit 0 5 10 15 20 25 30 0 1 2 3 4 5 6 7 8 9 10 gate trigger voltage, v gt - (v) gate trigger current, i gt - (a) lower limit upper limit 5w 10w 20w 50w 100w 150w - 40c
semiconductor DCR1150N42 9 / 1 0 www.dynexsemi.com package details for further package information, please contact customer services. all dimensions in mm, unless stated otherwise. do not scale. lead length: 420mm lead terminal connector: m4 ring package outline type code: n fig.17 package outline hole ?3.60 x 2.00 electrodes) deep (in both ?73.0 max ?47.0 nom ?47.0 nom ?1.5 gate anode cathode 3rd angle projection if in doubt ask do not scale 20 offset (nom.) to gate tube for package height see table device maximum thickness (mm) minimum thickness (mm) dcr1020n52 34.89 34.34 dcr1110n52 34.89 34.34 dcr1260n42 34.77 34.22 dcr1470n28 34.54 33.99 dcr1530n28 34.54 33.99 dcr1620n22 34.465 33.915 dcr1710n22 34.465 33.915 dcr680n85 35.51 34.96 dcr760n85 35.51 34.96 dcr820n65 35.15 34.6 dcr890n65 35.15 34.6
semiconductor DCR1150N42 10 / 1 0 www.dynexsemi.com important information: this publication is provided for information only and not for resale. the products and information in this publication are intended for use by appropriately trained technical personnel. due to the diversity of product applications, the information contained herein is provided as a general guide only and does n ot constitute any guarantee of suitability for use in a specific application . the user must evaluate the suitability of the product and the completeness of the product data for the application. the user is responsible for product selection and ensuring all safety and any warning requirements are met. should additional product information be needed please contact customer service. although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typograp hical errors. the information is provided without any warranty or guarantee of any kind. this publication is an uncontrolled document and is subject to change without notice. when referring to it please ensure that it is the most up to date version and has not been superse ded. the products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to property. the user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failure or malfunction. the products must not be touched when operating because there is a danger of electrocution or severe burning. always use protective safety equipment such as appropriate shields for the product and wear safety glasses. even when disconnected any electric charge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves. extended exposure to conditions outside the product ratings may affect reliability leading to premature pr oduct failure. use outside the product ratings is likely to cause permanent damage to the product. in extreme conditions, as with all semiconductors, this m ay include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. appropriate application design and safety precautions should always be followed to protect persons and property. product status & product ordering: we annotate datasheets in the top right hand corner of the front page, to indicate pr oduct status if it is not yet fully approved for production. the annotations are as follows: - target information: this is the most tentative form of information and represents a very preliminary specification. no actual design work on the product has bee n started. preliminary information: the product design is complete and final characterisation for volume production is in progress.the datasheet represents the product as it is now understood but details may change. no annotation: the product has been ap proved for production and unless otherwise notified by dynex any product ordered will be supplied to the current version of the data sheet prevailing at the time of our order acknowledgement. all products and materials are sold and services provided subje ct to dynexs conditions of sale, which are available on request. any brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. headquarters operations dynex semiconductor limited doddington road, lincoln, lincolnshire, ln6 3lf united kingdom. phone: +44 (0) 1522 500500 fax: +44 (0) 1522 500550 web: http://www.dynexsemi.com customer service phone: +44 (0) 1522 502753 / 502901 fax: +44 (0) 1522 500020 e - ma il: power_solutions@dynexsemi.com ? dynex semiconductor ltd. technical documentation C not for resale .
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